亚洲经典无码视频,va在线观看

//neu2010.01.02版Mega8基礎(chǔ)版（起源于約2009年。需配合Markus F.電路圖，
//中文注釋翻譯：itkw: autopccopy @ guangzhou 2022.04.22 AVR單片機價格昂貴，強烈建議移植到STC單片機）
//程序移植：rz123456，非常喜歡STC，功能強大、使用方便、價格便宜。
//刪除了一部分不需要的，原程序中AVR的硬件程序。OLED程序為廠家提供。
//本AVR例程不支持小容量芯片，需Mega8或Mega328起。使用WinAVR-20100110 編譯, PROGISP 1.72+USBIAP工具下載
#include <STC8G.h>
#include <stdlib.h>
#include <string.h>
#include "oled.h"
#include <math.h>
#define uint8_t unsigned char
#define uint16_t unsigned int
#define uint32_t unsigned long int
#define int16_t signed int
//三組測試電阻的阻值：R_L為680歐，R_H為470K
//如要修改，請輸入以歐姆為單位的電阻值定義(特別注意：此三組電阻須配對為阻值相近，否則誤差較大)
//#define R_L_VAL 680 //R_L; 標準值 680歐
//#define R_H_VAL 470000UL //R_H; 標準值 470K
#define R_L_VAL 510 //510歐
#define R_H_VAL 510000UL //510K
//在程序中計算必要的電阻值
#define RH_RL_RATIO (R_H_VAL/R_L_VAL)//高低電阻比
#define R_H_PER (R_H_VAL/100) //高電阻/100的值
//注意：N和P溝道增強型E-MOSFET柵極電容計算系數(shù)：取決于AVR的制造公差，在必要時進行調(diào)整
//（注：其他改進型有插入基準元件進行自動校準功能）
//#define N_GATE_CAPACITY_FACTOR 387 //N溝道系數(shù)
//#define P_GATE_CAPACITY_FACTOR 142 //P溝道系數(shù)
#define N_GATE_CAPACITY_FACTOR 18 //N溝道系數(shù)
#define P_GATE_CAPACITY_FACTOR 18
//電容器的電容計算系數(shù)：取決于 AVR 的制造公差，在必要時進行調(diào)整
//總測量范圍約為 0.2nF 至 1000uF。
//#define Hr_LowCAPACITY_FACTOR 94 //使用 470k 高電阻測量（小電容）系數(shù)
#define Hr_LowCAPACITY_FACTOR 21
//#define Lr_HighCAPACITY_FACTOR 283 //使用 680 低電阻測量（高電容）系數(shù)
#define Lr_HighCAPACITY_FACTOR 18
void ADC_Init();
void CheckPins(uint8_t HighPin, uint8_t LowPin, uint8_t TriPin);
void ReadCapacity(uint8_t HighPin, uint8_t LowPin);
void DischargePin(uint8_t PinToDischarge, uint8_t DischargeDirection);
uint16_t ReadADC(u8 addr); //ADC讀取
void GetGateThresholdVoltage(void); //取柵極開啟閾值電壓
void _delay_ms(unsigned int ms);
//端口C: PC0-PC2為測試腳TP1-TP3為,同時PB0-PB5分別連接680、470K三組測試電阻
//請不要更改 TP1、TP2和TP3 的定義！
//端口B: PB0-PB5分別連接680、470K連續(xù)三組測試電阻
//#define R_DDR DDRB //數(shù)據(jù)方向寄存器, 1:輸出/0:輸入
//#define R_PORT PORTB //6個測試電阻接PORTB,1:上拉電阻使能
//
////以下注釋為方便理解本程序:
////DDRxn控制引腳方向：當DDRxn為1時，Pxn為輸出；當DDRxn為0時，Pxn為輸入。
////PORTxn在PCn為輸入時，1為上拉電阻至VCC；否則引腳懸空。PCn為輸出時，1為輸出高電平；否則輸出低電平。
////PINxn的值為Pxn引腳的電平。不論如何配置DDxn，都可以通過讀取PINxn來獲得引腳電平。如果給PINxn寫入1，PORTxn的值會翻轉(zhuǎn)。
//
//#define ADC_DDR DDRC //數(shù)據(jù)方向寄存器： 1:輸出/0:輸入
//#define ADC_PORT PORTC //數(shù)據(jù)寄存器： 1: 輸入：上拉電阻使能或輸出：高電平
//#define ADC_PIN PINC //引腳寄存器：輸出時引腳的實際值
//#define TP1 PC0 //0
//#define TP2 PC1 //1
//#define TP3 PC2 //2
#define R_DDR P2M0 // 這個還要加 P2M1= ~P2M0;
#define R_PORT P2
#define ADC_DDR P1M0 //這個入=0 出=1 還要加P1M1 = ~P1M0; //設(shè)置 P1.0~P1.7 為雙向口模式
#define ADC_PORT P1 //設(shè)置
#define ADC_PIN P1
u8 TP1=0;
u8 TP2=1;
u8 TP3=2;
sbit RST_PIN=P0^1; //測試按鈕，按下為低電平
//元件屬性碼(與返回碼PartFound匹配)
#define PART_NONE 0 //無或故障
#define PART_DIODE 1 //二極管
#define PART_TRANSISTOR 2 //三極管
#define PART_FET 3 //FET
#define PART_TRIAC 4 //單向可控硅
#define PART_THYRISTOR 5 //雙向可控硅
#define PART_RESISTOR 6 //電阻
#define PART_CAPACITOR 7 //電容
//三極管子類型碼
#define PART_MODE_NPN 1 //NPN三極管
#define PART_MODE_PNP 2 //PNP三極管
//場效應(yīng)管子類型碼(與PartMode返回碼匹配。大屬性碼PartFound為PART_FET: 3)
#define PART_MODE_N_E_MOS 1 //N溝道增強型E-MOSFET
#define PART_MODE_P_E_MOS 2 //P溝道增強型E-MOSFET
#define PART_MODE_N_D_MOS 3 //N溝道耗盡型D-MOSFET
#define PART_MODE_P_D_MOS 4 //P溝道耗盡型D-MOSFET
#define PART_MODE_N_JFET 5 //N溝道JFET
#define PART_MODE_P_JFET 6 //P溝道JFET
//二極管結(jié)構(gòu)體
struct Diode //聲明有3個成員的結(jié)構(gòu)體，標簽被命名為Diode（結(jié)構(gòu)體將不同的數(shù)據(jù)類型整合為一個有機整體，方便數(shù)據(jù)管理，增加代碼的可讀性）
{
uint8_t Anode; //陽極引腳序號
uint8_t Cathode; //陰極
int16_t Voltage; //二極管導(dǎo)通電壓降
};
struct Diode diodes[6]; //用Diode標簽的結(jié)構(gòu)體，另外聲明了變量diodes數(shù)組
uint8_t NumOfDiodes; //存在的二極管個數(shù)
uint8_t b,c,e; //b,c,e引腳序號，配合顯示引腳號（取值0-2）
//三極管的測量
uint8_t PartReady; //測量的輪次數(shù)
uint8_t PartFound, tmpPartFound; //返回的元件屬性碼
uint8_t PartMode; //返回的元件子類型碼
uint32_t u32_hfe; //u32值，用于直流放大系數(shù)、電阻值等
uint16_t ADCval[2]; //ADC測量值
uint16_t ADCuBE[2]; //ADC測量: 基極-發(fā)射極BE
//電阻和電容測量
uint8_t ra, rb; //電阻引腳序號，配合顯示引腳號（取值0-2）
uint16_t rv[2]; //電阻兩端的電壓降
uint16_t rADCmax[2]; //可實現(xiàn)的最大ADC值(小于1023，因為測量電阻時LowPin上的電壓高于零)
uint8_t ca, cb; //電容引腳序號，配合顯示引腳號（取值0-2）
uint32_t cv; //電容容量值
uint8_t tmpVAL, tmpVAL2; //2個通用u8臨時變量
uint16_t ADCv[4]; //ADC的測量值
char chrVAL[8]; //字符串1
char chrVAL2[6]; //字符串2
uint32_t chrVAL2_cv;
uint32_t chrVAL_cv;
uint8_t itkw_tmp1; //僅用于對調(diào)引腳序號的臨時變量
//============================主程序開始============================
int main(void)
{
P0M0 = 0x08; //設(shè)置 P0.0~P0.7 為雙向口模式
P0M1 = 0x00;
P3M0 = 0xC0; //設(shè)置 P3.0~P3.7 為雙向口模式 C0=P3.6/7輸出oled電源
P3M1 = 0x00;
P0PU = 0x02; //上拉電阻P0.1
P0=0X02; //測試按鈕
P3=0X40; //P3.5 OLED+電源
OLED_Init();//初始化OLED
OLED_ColorTurn(0);//0正常顯示，1 反色顯示
OLED_DisplayTurn(1);//0正常顯示 1 屏幕翻轉(zhuǎn)顯示
ADC_Init();
//EA = 1; //允許全局中斷
//運行期間再次按下啟動按鈕時的入口點，復(fù)位變量后開始
start:
// wdt_enable(WDTO_2S); //看門狗開啟
PartFound = PART_NONE; //返回屬性碼為0
tmpPartFound = PART_NONE; //返回屬性碼為0
NumOfDiodes = 0; //二極管數(shù)量
PartReady = 0; //測量的輪次數(shù)
PartMode = 0; //返回子類型碼
ca = 0; //電容引腳序號a
cb = 0; //電容引腳序舃
// lcd_clear(); //清屏
OLED_Clear();
//開始測試
// lcd_eep_string(Testrunning); //顯示：Testrunning..
OLED_ShowString(0,0,"Testrunning...",16);
OLED_ShowChinese(0,2,3,16);//測試中
OLED_ShowChinese(16,2,4,16);//
OLED_ShowChinese(32,2,5,16);//
OLED_ShowString(48,2,"......",16);
//測量3個引腳的所有6種組合
CheckPins(TP1, TP2, TP3); //PC0,PC1,PC2
CheckPins(TP1, TP3, TP2);
CheckPins(TP2, TP1, TP3);
CheckPins(TP2, TP3, TP1);
CheckPins(TP3, TP1, TP2);
CheckPins(TP3, TP2, TP1);
//若屬性碼為空或電阻或二極管，則再單獨測量電容器(需先放電，否則可能無法測量)
if((PartFound == PART_NONE) || (PartFound == PART_RESISTOR) || (PartFound == PART_DIODE))
{
R_PORT = 0;
R_DDR = (1<<(TP1*2)) | (1<<(TP2*2)) | (1<<(TP3*2)); //電阻引腳R_H為輸出模式接地
P2M1 = ~P2M0;
_delay_ms(50);
R_DDR = 0; //電阻引腳為輸入模式
P2M1 = ~P2M0;
//測量所有6個引腳組合中的電容器
ReadCapacity(TP1, TP2);
ReadCapacity(TP1, TP3);
ReadCapacity(TP2, TP1);
ReadCapacity(TP2, TP3);
ReadCapacity(TP3, TP1);
ReadCapacity(TP3, TP2);
}
GetGateThresholdVoltage(); //取柵極開啟閾值電壓
// lcd_clear();
OLED_Clear();
//測量完成，現(xiàn)在評估如下
if(PartFound == PART_DIODE)//***二極管
{
if(NumOfDiodes == 1)
{
//標準二極管
// lcd_eep_string(Diode);
OLED_ShowChinese(0,0,16,16);//
OLED_ShowChinese(16,0,18,16);//
OLED_ShowChinese(32,0,19,16);//
OLED_ShowString(50,0,"Diode",16);
// lcd_eep_string(AK); //"A,K="
OLED_ShowString(0,2,"A,K=",16);
//lcd_data(diodes[0].Anode + 49);
OLED_ShowChar(40,2,(diodes[0].Anode + 49),16);
OLED_ShowChinese(48,2,8,16);//二極管
//lcd_data(diodes[0].Cathode + 49);
OLED_ShowChar(64,2,(diodes[0].Cathode + 49),16);
// Line2();
//lcd_eep_string(Uf); //“Uf =”
OLED_ShowString(0,4,"Uf =",16);
//lcd_string(itoa(diodes[0].Voltage, chrVAL, 10)); //顯示二極管導(dǎo)通電壓降
OLED_ShowNum(40,4,(diodes[0].Voltage),4, 16);
//lcd_eep_string(mV);
OLED_ShowString(72,4,"mV",16);
goto end;
}
else if(NumOfDiodes == 2)
{
//雙二極管
if(diodes[0].Anode == diodes[1].Anode)
{
//lcd_eep_string(DualDiode); //共陽極雙二極管
OLED_ShowChinese(0,0,20,16);//
OLED_ShowChinese(16,0,16,16);//
OLED_ShowChinese(32,0,18,16);//
OLED_ShowChinese(48,0,19,16);//
//OLED_ShowString(0,0,"DualDiode",16);
//lcd_string("CA");
OLED_ShowString(72,0,"CA",16);
//Line2();
//lcd_eep_string(AK1K2);//陽極,陰極1,陰極2=
OLED_ShowString(0,2,"AK1K2",16);
//lcd_data(diodes[0].Anode + 49);
OLED_ShowChar(88,2,(diodes[0].Anode + 49),16);
//lcd_data(diodes[0].Cathode + 49);
OLED_ShowChar(98,2,(diodes[0].Cathode + 49),16);
//lcd_data(diodes[1].Cathode + 49);
OLED_ShowChar(108,2,(diodes[1].Cathode + 49),16);
OLED_ShowChar(40,4,(diodes[0].Anode + 49),16);
OLED_ShowChinese(48,4,8,16);//二極管
OLED_ShowChar(64,4,(diodes[0].Cathode + 49),16);
OLED_ShowChar(40,6,(diodes[0].Anode + 49),16);
OLED_ShowChinese(48,6,8,16);//二極管
OLED_ShowChar(64,6,(diodes[1].Cathode + 49),16);
goto end;
}
else if(diodes[0].Cathode == diodes[1].Cathode)
{
//lcd_eep_string(DualDiode); //共陰極雙二極管
OLED_ShowChinese(0,0,20,16);//
OLED_ShowChinese(16,0,16,16);//
OLED_ShowChinese(32,0,18,16);//
OLED_ShowChinese(48,0,19,16);//
//lcd_string("CC");
OLED_ShowString(72,0,"CC",16);
//Line2();
//lcd_string("K,A1,A2=");
OLED_ShowString(0,2,"K,A1,A2=",16);
//lcd_data(diodes[0].Cathode + 49);
OLED_ShowChar(88,2,(diodes[0].Cathode + 49),16);
//lcd_data(diodes[0].Anode + 49);
OLED_ShowChar(98,2,(diodes[0].Anode + 49),16);
//lcd_data(diodes[1].Anode + 49);
OLED_ShowChar(108,2,(diodes[1].Anode + 49),16);
goto end;
}
else if ((diodes[0].Cathode == diodes[1].Anode) && (diodes[1].Cathode == diodes[0].Anode))
{
//lcd_eep_string(TwoDiodes); //反向并聯(lián)2個二極管。(注：此處原程序沒有顯示引腳序號)
OLED_ShowString(0,0,"TwoDiodes",16);
//Line2();
//lcd_eep_string(Antiparallel);
OLED_ShowString(0,2,"Antiparallel",16);
OLED_ShowChar(0,4,'2',16);
OLED_ShowChinese(8,4,10,16);// 2個二極管
OLED_ShowChinese(26,4,16,16);//
OLED_ShowChinese(42,4,18,16);//
OLED_ShowChinese(58,4,19,16);//
goto end;
}
}
else if(NumOfDiodes == 3) //2個二極管串聯(lián)；將被認為是3個二極管
{
b = 3;
c = 3;
//為此，必須有2個陰極和2個陽極匹配。
//這是因為這些二極管被認為是2個獨立的二極管，并且也被認為是一個“大”二極管。
if((diodes[0].Anode == diodes[1].Anode) || (diodes[0].Anode == diodes[2].Anode)) b = diodes[0].Anode;
if(diodes[1].Anode == diodes[2].Anode) b = diodes[1].Anode;
if((diodes[0].Cathode == diodes[1].Cathode) || (diodes[0].Cathode == diodes[2].Cathode)) c = diodes[0].Cathode;
if(diodes[1].Cathode == diodes[2].Cathode) c = diodes[1].Cathode;
if((b<3) && (c<3))
{
//lcd_eep_string(TwoDiodes); //2個串聯(lián)二極管
OLED_ShowString(0,0,"TwoDiodes",16);
//Line2();
//lcd_eep_string(sAK); //串聯(lián)陽極及陰極=
OLED_ShowString(0,2,"sAK",16);
//lcd_data(b + 49);
OLED_ShowChar(30,2,(b + 49),16);
//lcd_data(c + 49);
OLED_ShowChar(40,2,(c + 49),16);
OLED_ShowChar(0,4,'2',16);
OLED_ShowChinese(8,4,10,16);// 2個二極管
OLED_ShowChinese(26,4,16,16);//
OLED_ShowChinese(42,4,18,16);//
OLED_ShowChinese(58,4,19,16);//
goto end;
}
}
}
else if (PartFound == PART_TRANSISTOR) //***三極管
{
if(PartReady == 0) //如果未進行過第二次測試(例如在帶有保護二極管的三極管的情況下)
{
ADCval[1] = ADCval[0];
ADCuBE[1] = ADCuBE[0];
}
if((ADCval[0]>ADCval[1])) //如果在第一次測試期間放大系數(shù)較高，則更新數(shù)據(jù)，并對調(diào)c和e極。
{
ADCval[1] = ADCval[0];
ADCuBE[1] = ADCuBE[0];
itkw_tmp1 = c;
c = e;
e = itkw_tmp1;
}
OLED_ShowChinese(26,0,17,16);//三極管
OLED_ShowChinese(42,0,18,16);//
OLED_ShowChinese(58,0,19,16);//
if(PartMode == PART_MODE_NPN) //顯示NPN或PNP類型
{
//lcd_eep_string(NPN);
OLED_ShowString(0,2,"NPN",16);
OLED_ShowChinese(74,2,22,16);//<
}
else
{
//lcd_eep_string(PNP);
OLED_ShowString(0,2,"PNP",16);
OLED_ShowChinese(74,2,21,16);//>
}
//lcd_eep_string(BCE); //BCE=
OLED_ShowString(50,2,"BCE",16);
//lcd_data(b + 49); //依次顯示引腳序號(ascii 49 是字符"1", b,c,e取值范圍:0-2)
OLED_ShowChar(90,2,(b + 49),16);
//lcd_data(c + 49);
OLED_ShowChar(98,2,(c + 49),16);
//lcd_data(e + 49);
OLED_ShowChar(106,2,(e + 49),16);
//Line2();
//計算直流放大系數(shù) hFE = 發(fā)射極電流/基極電流
u32_hfe = ADCval[1];
u32_hfe *= RH_RL_RATIO; //高低電阻比
if(ADCuBE[1] < 11) ADCuBE[1] = 11;
u32_hfe /= ADCuBE[1];
ADCval[1] = (uint16_t)u32_hfe;
//lcd_eep_string(hfeSTR); //“hFE=”
OLED_ShowString(0,4,"hFE=",16);
//lcd_string(utoa(ADCval[1], chrVAL, 10));
OLED_ShowNum(32,4,(ADCval[1]),4, 16);
// SetCursor(2,7); //光標在第2行，字符7
if(NumOfDiodes > 2) //帶保護二極管的三極管
{
//lcd_data(LCD_CHAR_DIODE); //顯示二極管符號
OLED_ShowChinese(64,0,8,16);//
}
else
{
//lcd_data(' ');
OLED_ShowString(64,4," ",16);
}
for (c=0;c<NumOfDiodes;c++)
{
if(((diodes[c].Cathode == e) && (diodes[c].Anode == b) && (PartMode == PART_MODE_NPN)) || ((diodes[c].Anode == e) && (diodes[c].Cathode == b) && (PartMode == PART_MODE_PNP)))
{
//lcd_eep_string(Uf); //“Uf=”
OLED_ShowString(8,6,"Uf=",16);
//lcd_string(itoa(diodes[c].Voltage, chrVAL, 10));
OLED_ShowNum(32,6,(diodes[c].Voltage),4, 16);
//lcd_data('m'); //應(yīng)是mV的意思..
OLED_ShowString(64,6,"mV",16);
goto end;
}
}
goto end;
}
else if (PartFound == PART_FET) //JFET 或 MOSFET
{
if(PartMode&1) //判斷子類型碼為單數(shù)是N型，否則為P型(...)
{
//lcd_data('N'); //N型
OLED_ShowString(0,0,"N",16);
}
else
{
//lcd_data('P'); //P型
OLED_ShowString(0,0,"P",16);
}
//if((PartMode==PART_MODE_N_E_MOS) || (PART_MODE_P_E_MOS))
if(PartMode < 3) //E-MOSFET:1、2(與下面對應(yīng))
{
//lcd_eep_string(emode); //“-E”
OLED_ShowString(8,0,"-E",16);
//lcd_eep_string(mosfet); //“-MOS”
OLED_ShowString(24,0,"-MOS",16);
}
else if((PartMode==PART_MODE_N_D_MOS) || (PartMode==PART_MODE_P_D_MOS)) //耗盡型D-MOSFET：3、4
{
//lcd_eep_string(dmode); //“-D”
OLED_ShowString(8,0,"-D",16);
//lcd_eep_string(mosfet); //“-MOS”
OLED_ShowString(24,0,"-MOS",16);
}
else //JFET：5、6
{
// lcd_eep_string(jfet); //“-JFET”
OLED_ShowString(24,0,"-JFET",16);
}
//增強型E-MOSFET 則測量柵極電容
if(PartMode < 3) //E-MOSFET:1、2
{
// lcd_eep_string(GateCap); //“C=”
OLED_ShowString(50,4,"C=",16);
//tmpVAL = strlen(chrVAL2);//chrVAL2_cv
//tmpVAL2 = tmpVAL;
// if(tmpVAL>4) tmpVAL = 4; //對于 >100nF 的電容，不要指定最后一個小數(shù)位（否則它不適合 LCD）(顯示4位長度)
//lcd_show_format_cap(chrVAL2, tmpVAL, tmpVAL2);
OLED_ShowNum(66,4,chrVAL2_cv,4, 16);
//lcd_data('n');
OLED_ShowString(116,4,"p",16);
}
//Line2();
//lcd_eep_string(gds); //“GDS=” (注：此處與三極管的三個極分別顯示的方式不同)
OLED_ShowString(0,2,"GDS=",16);
//lcd_data(b + 49);
OLED_ShowChar(38,2,(b + 49),16);
//lcd_data(c + 49);
OLED_ShowChar(46,2,(c + 49),16);
//lcd_data(e + 49);
OLED_ShowChar(54,2,(e + 49),16);
if((PartMode < 3) && (NumOfDiodes > 0)) //增強型E-MOSFET及帶保護二極管的
{
//lcd_data(LCD_CHAR_DIODE); //顯示二極管符號
OLED_ShowString(0,4,"DIODE",16);
}
else
{
//lcd_data(' '); //空格
OLED_ShowString(0,4," ",16);
}
if(PartMode < 3) //增強型E-MOSFET
{
//lcd_eep_string(vt); //Vt=
OLED_ShowString(0,6,"Vt=",16);
//lcd_string(chrVAL); //顯示柵極閾值電壓
OLED_ShowNum(24,6,chrVAL_cv,4, 16);
//lcd_data('m');
OLED_ShowString(100,6,"mV",16);
}
goto end;
}
else if (PartFound == PART_THYRISTOR) //單向可控硅
{
// lcd_eep_string(Thyristor);
OLED_ShowString(0,0,"Thyristor",16);
// Line2();
// lcd_string("GAK=");
OLED_ShowString(0,2,"GAK=",16);
// lcd_data(b + 49);
OLED_ShowChar(30,2,(b + 49),16);
// lcd_data(c + 49);
OLED_ShowChar(38,2,(c + 49),16);
// lcd_data(e + 49);
OLED_ShowChar(46,2,(e + 49),16);
goto end;
}
else if (PartFound == PART_TRIAC) //三端雙向可控硅
{
//lcd_eep_string(Triac);
OLED_ShowString(50,0,"Triac",16);
//Line2();
//lcd_eep_string(GA1A2); //注:已改為統(tǒng)一顯示
OLED_ShowString(0,2,"G A1 A2",16);
// lcd_data(b + 49);
OLED_ShowChar(0,4,(b + 49),16);
// lcd_data(e + 49);
OLED_ShowChar(16,4,(e + 49),16);
// lcd_data(c + 49);
OLED_ShowChar(40,4,(c + 49),16);
goto end;
}
else if(PartFound == PART_RESISTOR) //電阻
{
// lcd_eep_string(Resistor); //顯示:Resistor
OLED_ShowChinese(0,0,0,16);//電
OLED_ShowChinese(16,0,1,16);//阻
OLED_ShowString(40,0,"Resistor",16);
// lcd_data(ra + 49); //顯示引腳序號
OLED_ShowChar(30,2,(ra + 49),16);
// lcd_data('-');
//OLED_ShowChar(46,2,('-'),16);
OLED_ShowChinese(38,2,6,16);//電zhu
// lcd_data(rb + 49);
OLED_ShowChar(54,2,(rb + 49),16);
// Line2();
// lcd_string ("R = ");
OLED_ShowString(30,4,"R =",16);
if(rv[0]>512) //檢查測試電阻兩端的電壓與中值512相差有多遠
{
ADCval[0] = (rv[0]-512);
}
else
{
ADCval[0] = (512-rv[0]);
}
if(rv[1]>512)
{
ADCval[1] = (rv[1]-512);
}
else
{
ADCval[1] = (512-rv[1]);
}
if(ADCval[0] > ADCval[1])
{
rADCmax[0] = rADCmax[1];
rv[0] = rv[1]; //使用更接近512的結(jié)果（準確度更高）
rv[1] = R_H_PER; //470k電阻（數(shù)值除100）
}
else
{
rv[1] = R_L_VAL; //680R測試電阻
}
if(rv[0]==0) rv[0] = 1;
u32_hfe = (uint32_t)((uint32_t)((uint32_t)rv[1]*(uint32_t)rv[0]) / (uint32_t)((uint32_t)rADCmax[0]-(uint32_t)rv[0]));
//計算電阻
if(rv[1]==R_H_PER) //470k電阻
{
OLED_ShowNum(54,4,u32_hfe/10,5, 16);
OLED_ShowChar(102,4,('K'),16);
}
else
{
OLED_ShowNum(54,4,u32_hfe,5, 16);
OLED_ShowChinese(102,4,7,16);////顯示Ω
//OLED_ShowChar(102,4,32+95,16);//顯示Ω
}
// ultoa(u32_hfe,chrVAL,10); //轉(zhuǎn)換一個無符號長整型數(shù)為字符串,10進制
// if(rv[1]==R_H_PER) //470k電阻
// {
// ra = strlen(chrVAL); //ra字符串長度，必須顯示逗號
// for (rb=0;rb<ra;rb++)
// {
// lcd_data(chrVAL[rb]);
// if(rb==(ra-2)) lcd_data('.'); //逗號
// }
// lcd_data ('k'); //如果使用470k 電阻，則顯示單位為千歐
// }
// else
// {
// lcd_string(chrVAL);
// }
// lcd_data(LCD_CHAR_OMEGA); //顯示歐米茄符號代表歐姆
goto end;
}
else
if(PartFound == PART_CAPACITOR) //電容
{
// lcd_eep_string(Capacitor); //顯示Capacitor
OLED_ShowChinese(0,0,0,16);//電
OLED_ShowChinese(16,0,2,16);//容
OLED_ShowString(40,0,"Capacitor",16);
// lcd_data(ca + 49); //顯示引腳序號
OLED_ShowChar(0,2,(ca + 49),16);
// lcd_data('-');
OLED_ShowChar(16,2,('-'),16);
// lcd_data(cb + 49);
OLED_ShowChar(32,2,(cb + 49),16);
// Line2();
tmpVAL2 = 'n';
// if(cv > 99999) //到達1uF則改為微法顯示:u。
// {
// cv /= 1000;
// tmpVAL2 = LCD_CHAR_U;
// }
OLED_ShowNum(0,4,cv,9, 16);
OLED_ShowString(108,4,"pF",16);
OLED_ShowNum(0,6,cv/1000,6, 16);
OLED_ShowString(48,6,"nF",16);
OLED_ShowNum(64,6,cv/1000000,4, 16);
OLED_ShowString(108,6,"uF",16);
// ultoa(cv, chrVAL, 10);
// tmpVAL = strlen(chrVAL);
// lcd_show_format_cap(chrVAL, tmpVAL, tmpVAL);
// lcd_data(tmpVAL2); //顯示: n或u
// lcd_data('F');
goto end;
}
if(NumOfDiodes == 0) //未找到二極管
{
OLED_ShowChinese(0,2,9,16);//
OLED_ShowChinese(16,2,10,16);//
OLED_ShowChinese(32,2,11,16);//
OLED_ShowChinese(48,2,12,16);//
OLED_ShowChinese(64,2,13,16);//
OLED_ShowChinese(80,2,14,16);//
OLED_ShowChinese(96,2,14,16);//
OLED_ShowChinese(112,2,14,16);//
OLED_ShowChinese(48,4,8,16);//
OLED_ShowChinese(32,4,6,16);//
OLED_ShowChinese(16,4,15,16);//
}
else
{
OLED_ShowChinese(0,2,9,16);//
OLED_ShowChinese(16,2,10,16);//
OLED_ShowChinese(32,2,11,16);//
OLED_ShowChinese(48,2,12,16);//
OLED_ShowChinese(64,2,13,16);//
OLED_ShowChinese(80,2,14,16);//
OLED_ShowChinese(96,2,14,16);//
OLED_ShowChinese(112,2,14,16);//
OLED_ShowChar(0,6,NumOfDiodes + 48,16);
// lcd_data(LCD_CHAR_DIODE); //二極管符號
OLED_ShowChinese(16,6,8,16);//二極管符號
}
end:
while(1) //無限循環(huán)(本程序自動關(guān)機功能已省略)
{
if(RST_PIN==0)//PD7按鈕按下為低電平,跳回到起點并進行新的測試
{
goto start;
}
}
return 0;
}
void CheckPins(uint8_t HighPin, uint8_t LowPin, uint8_t TriPin) //調(diào)用方式：CheckPins(TP1, TP2, TP3);（共6個組合）PC口
{
//用于測試具有指定引腳分配的元件屬性
//HighPin：最初設(shè)置為高電平的引腳：連接到 Vcc
//LowPin：最初設(shè)置為低電平的引腳: 通過 R_L 連接到 GND
//TriPin：最初設(shè)置為開路的引腳 : 高阻狀態(tài)(三態(tài)腳)
//在測試的過程中，TriPin會進行循環(huán)高低電平切換。
//注:以下是否重復(fù)定義了變量???
uint16_t ADCv[6];
uint8_t tmpVAL, tmpVAL2;
u8 i,j;
// wdt_reset();
//LowPin通過 R_L 連接到 GND 1<<8 把1向左移8位
tmpVAL = (LowPin*2);
R_DDR = (1<<tmpVAL);
// P2M1 = ~P2M0;
P2M1=~P2M0;
// OLED_ShowNum(0,6,P2M0,4, 16);
R_PORT = 0;
// while(!RX1_Cnt); //等待輸入
// Print(0xcc);
// RX1_Cnt=0; //復(fù)位
ADC_DDR = (1<<HighPin);
P1M1 = ~P1M0;
ADC_PORT= (1<<HighPin); //HighPin連接在 Vcc
_delay_ms(5);
//對于某些 MOSFET，柵極（TriPin）必須先放電
//N通道：
DischargePin(TriPin,0);
//測量LowPin上的電壓,元件是否在測試座上鎖定？
ADCv[0] = ReadADC(LowPin);
// OLED_ShowNum(60,6,ADCv[0],4, 16);
// while(!RX1_Cnt); //等待輸入
// Print(0xdd);
// RX1_Cnt=0; //復(fù)位
if(ADCv[0] < 20) goto next;
//否則：為 P 通道放電（柵極接正）
DischargePin(TriPin,1);
//再測量LowPin上的電壓
ADCv[0] = ReadADC(LowPin);
next:
if(ADCv[0] < 20) //如果元件在HighPin和LowPin 之間沒有連續(xù)性
{
tmpVAL2 = (TriPin*2);
R_DDR |= (1<<tmpVAL2); //三態(tài)引腳通過 R_L 接地，以測試 pnp
P2M1 = ~P2M0;
_delay_ms(2);
ADCv[0] = ReadADC(LowPin); //測量電壓
if(ADCv[0] > 700)
{
//元件傳導(dǎo) => pnp 三極管或類似的。
//測量兩個方向的增益
R_DDR = (1<<tmpVAL); //三態(tài)引腳（基極）高阻抗
P2M1 = ~P2M0;
tmpVAL2++;
R_DDR |= (1<<tmpVAL2); //三態(tài)引腳（基極）通過 R_H 接地
P2M1 = ~P2M0;
_delay_ms(10);
ADCv[0] = ReadADC(LowPin); //測量LowPin（假定為集電極）的電壓。
ADCv[2] = ReadADC(TriPin); //測量三態(tài)引腳(基極)電壓
R_DDR = (1<<tmpVAL); //三態(tài)引腳（基極）高阻抗
P2M1 = ~P2M0;
//三態(tài)引腳（基極）高阻抗
//檢查測試是否已經(jīng)運行過
if((PartFound == PART_TRANSISTOR) || (PartFound == PART_FET)) PartReady = 1; //將PartReady置1(第2輪)
ADCval[PartReady] = ADCv[0]; //登記到n輪的結(jié)果
ADCuBE[PartReady] = ADCv[2];
if(ADCv[2] > 200)
{
if(PartFound != PART_THYRISTOR) //若非雙向可控硅
{
PartFound = PART_TRANSISTOR;
PartMode = PART_MODE_PNP; //則為PNP 三極管（基極被“拉高”）
}
}
else
{
if(PartFound != PART_THYRISTOR) //若非雙向可控硅
{
PartFound = PART_FET;
PartMode = PART_MODE_P_E_MOS; //則為P溝道 MOSFET（基極/柵極未“上拉”）
}
}
if(PartFound != PART_THYRISTOR) //若非雙向可控硅
{
b = TriPin;
c = LowPin;
e = HighPin;
}
}
//三態(tài)腳TriPin（假定為基數(shù)）到正極，以測試 npn
ADC_PORT = 0; //LowPin到地
tmpVAL = (TriPin*2);
tmpVAL2 = (HighPin*2);
R_DDR = (1<<tmpVAL) | (1<<tmpVAL2); //HighPin和三態(tài)引腳輸出
P2M1 = ~P2M0;
R_PORT = (1<<tmpVAL) | (1<<tmpVAL2); //HighPin和三態(tài)引腳通過 R_L 到 Vcc
ADC_DDR = (1<<LowPin); //LowPin輸出
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